final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 optimos ? -p2 power-transistor features ? p-channel - normal level - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green package (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =-10v -80 a t c =100c, v gs =-10v 2) -80 pulsed drain current 2) i d,pulse t c =25c -320 avalanche energy, single pulse e as i d =-40a 64 mj avalanche current, single pulse i as - -80 a gate source voltage v gs - 20 v power dissipation p tot t c =25 c 125 w operating and storage temperature t j , t stg - -55 ... +175 c iec climatic category; din iec 68-1 - - 55/175/56 value v ds -40 v r ds(on) (smd version) 4.9 m w i d -80 a product summary type package marking ipb80p04p4-05 pg-to263-3-2 4p0405 IPI80P04P4-05 pg-to262-3-1 4p0405 ipp80p04p4-05 pg-to220-3-1 4p0405 pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 rev. 1.0 page 1 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - - 1.2 k/w thermal resistance, junction - ambient, leaded r thja - - - 62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = -1ma -40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-250a -2.0 -3.0 -4.0 zero gate voltage drain current i dss v ds =-32v, v gs =0v, t j =25c - -0.05 -1 a v ds =-32v, v gs =0v, t j =125c 2) - -20 -200 gate-source leakage current i gss v gs =-20v, v ds =0v - - -100 na drain-source on-state resistance r ds(on) v gs =-10v, i d =-80a - 4.0 5.2 m w v gs =-10v, i d =-80a, smd version - 3.7 4.9 values rev. 1.0 page 2 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 parameter symbol conditions unit min. typ. max. dynamic characteristics 2) input capacitance c iss - 7900 10300 pf output capacitance c oss - 2800 3600 reverse transfer capacitance c rss - 76 150 turn-on delay time t d(on) - 42 - ns rise time t r - 24 - turn-off delay time t d(off) - 73 - fall time t f - 65 - gate charge characteristics 2) gate to source charge q gs - 46 60 nc gate to drain charge q gd - 21 42 gate charge total q g - 116 151 gate plateau voltage v plateau - -5.2 - v reverse diode diode continous forward current 2) i s - - -80 a diode pulse current 2) i s,pulse - - -320 diode forward voltage v sd v gs =0v, i f =-80a, t j =25c - -1 -1.3 v reverse recovery time 2) t rr - 61 - ns reverse recovery charge 2) q rr - 73 - nc v r =-20v, i f =-50a, d i f /d t =-100a/s 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 1.2k/w the chip is able to carry -137a at 25c. t c =25c values v gs =0v, v ds =-25v, f =1mhz v dd =-20v, v gs =-10v, i d =-80a, r g =3.5 w v dd =-32v, i d =-80a, v gs =0 to -10v rev. 1.0 page 3 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 1 power dissipation 2 drain current p tot = f( t c ); v gs - 6 v i d = f( t c ); v gs - 6 v ; s m d 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0; smd z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 -v ds [v] - i d [ a ] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z t h j c [ k / w ] 0 20 40 60 80 100 120 140 0 50 100 150 200 t c [c] p t o t [ w ] 0 20 40 60 80 100 0 50 100 150 200 t c [c] - i d [ a ] rev. 1.0 page 4 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c; smd r ds(on) = ( i d ); t j = 25 c; smd parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = -6v r ds(on) = f( t j ); i d = -80 a; v gs = -10 v; smd parameter: t j -5v -5.5v -6v -6.5v -7v -10v 0 3 6 9 12 15 18 0 20 40 60 80 -i d [a] r d s ( o n ) [ m w ] 2 3 4 5 6 7 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m w ] -55 c 25 c 175 c 0 80 160 240 320 2 3 4 5 6 7 8 -v gs [v] - i d [ a ] -5v -5.5v -6v -6.5v -7v -10v 0 80 160 240 320 0 1 2 3 4 5 6 -v ds [v] - i d [ a ] rev. 1.0 page 5 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: - i d 11 typical forward diode characteristicis 12 drain-source breakdown voltage i f = f(v sd ) v br(dss) = f(tj); i d = -1 ma parameter: t j 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd [v] - i f [ a ] ciss coss crss 10 5 10 4 10 3 10 2 10 1 0 5 10 15 20 25 30 -v ds [v] c [ p f ] 250a 2500a 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] - v g s ( t h ) [ v ] 35 36 37 38 39 40 41 42 43 44 45 -60 -20 20 60 100 140 180 t j [c] - v b r ( d s s ) [ v ] rev. 1.0 page 6 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 13 typ. gate charge 14 gate charge waveforms v gs = f(q gate ); i d = -80 a pulsed parameter: v dd -8v -32v 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 q gate [nc] - v g s [ v ] v gs q gate q gs q gd q g v gs q gate q gs q gd q g rev. 1.0 page 7 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2011 all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2011-04-18
final data sheet ipb80p04p4-05 IPI80P04P4-05, ipp80p04p4-05 revision history version revision 0.2 revision 0.3 revision 1.0 final data sheet date 31.03.2010 02.06.2010 04.02.2011 changes initial preliminary data sheet q rr : i f =50a rev. 1.0 page 9 2011-04-18
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